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| Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.60.15 s Features q q q 0.4 0.80.1 0.4 0.2-0.05 0.15-0.05 +0.1 High-speed switching. Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.60.1 1.00.1 0.5 1 0.5 3 2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC PC Tj Tstg Ratings 40 40 5 300 100 125 125 -55 ~ +125 Unit V V V mA mA mW C C 1:Base 2:Emitter 3:Collector EIAJ:SC-75 SS-Mini Type Package Marking symbol : 2Y s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25C) Symbol ICBO IEBO hFE* VCE(sat) VBE(sat) fT Cob ton toff tstg Refer to the measurment circuit Conditions VCB = 15V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 450 2 17 17 10 6 60 0.17 min typ max 0.1 0.1 200 0.25 1.0 V V MHz pF ns ns ns Unit A A *h FE Rank classification Rank hFE Marking Symbol Q 60 ~ 120 2YQ R 90 ~ 200 2YR 0 to 0.1 0.20.1 +0.1 (Ta=25C) 0.450.1 0.3 0.750.15 s Absolute Maximum Ratings 1 Transistor Switching time measurement circuit ton, toff Test Circuit 0.1F Vout 220 Vin=10V 50 3.3k 3.3k Vbb= -3V 50 Vin=10V VCC=3V 500 50 Vbb=2V VCC=10V A 910 0.1F 500 90 2SC4691 PC -- Ta tstg Test Circuit 0.1F 1k Vout 150 Collector power dissipation PC (mW) 125 100 75 50 Vin Vout 10% 90% Vin Vout 10% 90% 0 Vin 10% 10% tstg (Waveform at A) 25 Vout ton toff 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 120 Ta=25C 100 100 30 10 3 1 VCE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 100 30 10 3 1 0.3 0.1 0.03 0.01 0.3 1 3 10 300 100 1 3 VBE(sat) -- IC Collector current IC (mA) IB=3.0mA 2.5mA 2.0mA 1.5mA 80 60 1.0mA 40 0.5mA 20 Ta=75C 0.3 0.1 0.03 0.01 0.1 25C -25C Ta=-25C 25C 75C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE -- IC 600 VCE=1V 600 fT -- IE 6 Cob -- VCB Collector output capacitance Cob (pF) VCE=10V Ta=25C IE=0 f=1MHz Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 500 5 400 400 4 300 300 3 200 Ta=75C 25C -25C 200 2 100 100 1 0 0.1 0.3 1 3 10 30 100 0 -1 0 -3 -10 -30 -100 -300 -1000 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 |
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